Результаты поиска BSC025N03MSG
Найдено 2 результатов.
- Infineon Technologies — Infineon Technologies BSC025N03MSG Current - Continuous Drain (id) @ 25В° C: 100A Drain To Source Voltage (vdss): 30V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 98nC @ 10V Input Capacitance (ciss) @ Vds: 7600pF @ 15V Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Power - Max: 83W Rds On (max) @ Id, Vgs: 2.5 mOhm @ 30A, 10V Series: OptiMOSв„ў Vgs(th) (max) @ Id: 2V @ 250ВµA Other Names: BSC025N03MSGINTR, BSC025N03MSGXT, SP000311505
- Infineon Technologies — Infineon Technologies BSC025N03MSGATMA1 Mfr Package Description: GREEN, PLASTIC, TDSON-8 EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 5 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 23 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 135 mJ Drain-source On Resistance-Max: 0.0030 ohm Pulsed Drain Current-Max (IDM): 400 A