Результаты поиска BS108/01,126

Найдено 1 результатов.

• BS108/01,126
  NXP Semiconductors — NXP Semiconductors BS108/01,126 Current - Continuous Drain (id) @ 25В° C: 300mA Drain To Source Voltage (vdss): 200V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 120pF @ 25V Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 1W Rds On (max) @ Id, Vgs: 5 Ohm @ 100mA, 2.8V Series: - Vgs(th) (max) @ Id: 1.8V @ 1mA Other Names: 934009850126, BS108/01 AMO