Результаты поиска BLT81,115
Найдено 2 результатов.
- NXP Semiconductors — NXP Semiconductors BLT81.115 Collector Emitter Voltage V(br)ceo: 9.5V Dc Collector Current: 500mA Dc Current Gain Hfe: 25 Gain Bandwidth Ft Typ: 900MHz No. Of Pins: 3 Power Dissipation Pd: 2W Rf Transistor Case: SOT-223 Rohs Compliant: Yes Svhc: No SVHC Transistor Polarity: N Channel
- NXP Semiconductors — NXP Semiconductors BLT81,115 Collector- Emitter Voltage Vceo Max: 9.5 V Configuration: Single Dual Emitter Current - Collector (ic) (max): 500mA Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 300mA, 5V Emitter- Base Voltage Vebo: 2.5 V Frequency - Transition: 900MHz Gain: 6.5dB ID_COMPONENTS: 1948968 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): - Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 2W Power Dissipation: 2000 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 9.5V Product Category: Transistors RF Bipolar Power RoHS: yes Collector- Emitter Voltage VCEO Max: 9.5 V Emitter- Base Voltage VEBO: 2.5 V Maximum DC Collector Current: 0.5 A Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BLT81 T/R Other Names: 934019790115::BLT81 T/R::BLT81 T/R