Результаты поиска BLT50,115
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- NXP Semiconductors — NXP Semiconductors BLT50,115 Collector- Emitter Voltage Vceo Max: 10 V Configuration: Single Dual Emitter Current - Collector (ic) (max): 500mA Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 300mA, 5V Emitter- Base Voltage Vebo: 3 V Frequency - Transition: 470MHz Gain: - ID_COMPONENTS: 1948967 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): - Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 2W Power Dissipation: 2000 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 10V Product Category: Transistors RF Bipolar Power RoHS: yes Collector- Emitter Voltage VCEO Max: 10 V Emitter- Base Voltage VEBO: 3 V Maximum DC Collector Current: 0.5 A Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BLT50 T/R Other Names: 934004150115, BLT50 T/R