Результаты поиска BLF7G24L-100,112

Найдено 2 результатов.

• BLF7G24L-100,112
  NXP Semiconductors — NXP Semiconductors BLF7G24L-100,112 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 2.4 GHz Gain: 18.7 dB Output Power: 30 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 28 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-502A Mounting Style: SMD/SMT Factory Pack Quantity: 20
• BLF7G24L-100,112
  NXP Semiconductors — NXP Semiconductors BLF7G24L-100,112 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 2.4 GHz Gain: 18.7 dB Output Power: 30 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 28 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-502A Mounting Style: SMD/SMT Factory Pack Quantity: 20