Результаты поиска BLF6G27-45

Найдено 5 результатов.

• BLF6G27-45
  NXP Semiconductors — NXP Semiconductors BLF6G27-45 Configuration: Single Continuous Drain Current: 20 A Drain-source Breakdown Voltage: 65 V Gate-source Breakdown Voltage: - 0.5 V, 13 V Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: CDFM Resistance Drain-source Rds (on): 0.385 Ohms Transistor Polarity: N-Channel Other Names: BLF6G27-45,112
• BLF6G27-45,135
  Philips Semiconductors — Philips Semiconductors BLF6G27-45,135 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 2.5 GHz to 2.7 GHz Gain: 18 dB Output Power: 7 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 20 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-608A Mounting Style: SMD/SMT Factory Pack Quantity: 300
• BLF6G27-45,112
  NXP Semiconductors — NXP Semiconductors BLF6G27-45,112 Configuration: Single Continuous Drain Current: 20 A Current - Test: 350mA Current Rating: 20A Drain-source Breakdown Voltage: 65 V Frequency: 2.7GHz Gain: 18dB Gate-source Breakdown Voltage: - 0.5 V, 13 V ID_COMPONENTS: 3737833 Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: - Package / Case: SOT-608A Power - Output: 7W Resistance Drain-source Rds (on): 0.385 Ohms Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Product Category: Transistors RF MOSFET Power RoHS: yes Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: - 0.5 V, 13 V Product Type: MOSFET Power Resistance Drain-Source RDS (on): 0.385 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF6G27-45 Other Names: 934060908112, BLF6G27-45
• BLF6G27-45,135
  NXP Semiconductors — Philips Semiconductors BLF6G27-45,135 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 2.5 GHz to 2.7 GHz Gain: 18 dB Output Power: 7 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 20 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-608A Mounting Style: SMD/SMT Factory Pack Quantity: 300
• BLF6G27-45,112
  NXP Semiconductors — NXP Semiconductors BLF6G27-45,112 Configuration: Single Continuous Drain Current: 20 A Current - Test: 350mA Current Rating: 20A Drain-source Breakdown Voltage: 65 V Frequency: 2.7GHz Gain: 18dB Gate-source Breakdown Voltage: - 0.5 V, 13 V ID_COMPONENTS: 3737833 Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: - Package / Case: SOT-608A Power - Output: 7W Resistance Drain-source Rds (on): 0.385 Ohms Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Product Category: Transistors RF MOSFET Power RoHS: yes Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: - 0.5 V, 13 V Product Type: MOSFET Power Resistance Drain-Source RDS (on): 0.385 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF6G27-45 Other Names: 934060908112, BLF6G27-45