Результаты поиска BLF6G20-75,112

Найдено 2 результатов.

• BLF6G20-75,112
  Philips Semiconductors — Philips Semiconductors BLF6G20-75,112 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 1.8 GHz to 2 GHz Gain: 19 dB Output Power: 63 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 18 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-502A Mounting Style: SMD/SMT Factory Pack Quantity: 20
• BLF6G20-75,112
  NXP Semiconductors — Philips Semiconductors BLF6G20-75,112 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 1.8 GHz to 2 GHz Gain: 19 dB Output Power: 63 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 18 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-502A Mounting Style: SMD/SMT Factory Pack Quantity: 20