Результаты поиска BLF6G10S-45,112

Найдено 3 результатов.

• BLF6G10S-45,112
  NXP Semiconductors — NXP Semiconductors BLF6G10S-45,112 Channel Mode: Enhancement Channel Type: N Configuration: Single Continuous Drain Current: 13 A Current - Test: 350mA Current Rating: 13A Drain Efficiency (typ): 8% Drain Source Resistance (max): 200(Typ)@6.1Vmohm Drain Source Voltage (max): 65V Drain-source Breakdown Voltage: 65 V Forward Transconductance (typ): 5S Frequency: 922.5MHz Frequency (max): 960MHz Frequency (min): 920MHz Gain: 23dB Gate-source Breakdown Voltage: 13 V ID_COMPONENTS: 3737998 Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mode Of Operation: 2-Carrier W-CDMA Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 225C Output Power (max): 1W(Typ) Package / Case: SOT-608B Package Type: CDFM Pin Count: 3 Power - Output: 1W Power Gain (typ)@vds: 23@28VdB Product Type: MOSFET Power Resistance Drain-source Rds (on): 0.2 Ohms Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Vswr (max): 10 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 1 W Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: 13 V Resistance Drain-Source RDS (on): 0.2 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF6G10S-45 Other Names: 934061036112, BLF6G10S-45
• BLF6G10S-45,112
  NXP Semiconductors — NXP Semiconductors BLF6G10S-45,112 Channel Mode: Enhancement Channel Type: N Configuration: Single Continuous Drain Current: 13 A Current - Test: 350mA Current Rating: 13A Drain Efficiency (typ): 8% Drain Source Resistance (max): 200(Typ)@6.1Vmohm Drain Source Voltage (max): 65V Drain-source Breakdown Voltage: 65 V Forward Transconductance (typ): 5S Frequency: 922.5MHz Frequency (max): 960MHz Frequency (min): 920MHz Gain: 23dB Gate-source Breakdown Voltage: 13 V ID_COMPONENTS: 3737998 Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mode Of Operation: 2-Carrier W-CDMA Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 225C Output Power (max): 1W(Typ) Package / Case: SOT-608B Package Type: CDFM Pin Count: 3 Power - Output: 1W Power Gain (typ)@vds: 23@28VdB Product Type: MOSFET Power Resistance Drain-source Rds (on): 0.2 Ohms Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Vswr (max): 10 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 1 W Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: 13 V Resistance Drain-Source RDS (on): 0.2 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF6G10S-45 Other Names: 934061036112, BLF6G10S-45
• BLF6G10S-45,112
  NXP Semiconductors — NXP Semiconductors BLF6G10S-45,112 Channel Mode: Enhancement Channel Type: N Configuration: Single Continuous Drain Current: 13 A Current - Test: 350mA Current Rating: 13A Drain Efficiency (typ): 8% Drain Source Resistance (max): 200(Typ)@6.1Vmohm Drain Source Voltage (max): 65V Drain-source Breakdown Voltage: 65 V Forward Transconductance (typ): 5S Frequency: 922.5MHz Frequency (max): 960MHz Frequency (min): 920MHz Gain: 23dB Gate-source Breakdown Voltage: 13 V ID_COMPONENTS: 3737998 Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mode Of Operation: 2-Carrier W-CDMA Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 225C Output Power (max): 1W(Typ) Package / Case: SOT-608B Package Type: CDFM Pin Count: 3 Power - Output: 1W Power Gain (typ)@vds: 23@28VdB Product Type: MOSFET Power Resistance Drain-source Rds (on): 0.2 Ohms Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Vswr (max): 10 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 1 W Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: 13 V Resistance Drain-Source RDS (on): 0.2 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF6G10S-45 Other Names: 934061036112, BLF6G10S-45