Результаты поиска BLF642,112

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• BLF642,112
  NXP Semiconductors — NXP Semiconductors BLF642,112 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 1.3 GHz Gain: 19 dB Output Power: 35 W Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: 11 V Maximum Operating Temperature: + 150 C Package / Case: SOT-467C Mounting Style: SMD/SMT Factory Pack Quantity: 20