Результаты поиска BLF178P,112

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• BLF178P,112
  NXP Semiconductors — NXP Semiconductors BLF178P,112 RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 108 MHz Gain: 28.5 dB Output Power: 1.2 kW Drain-Source Breakdown Voltage: 110 V Continuous Drain Current: 88 A Gate-Source Breakdown Voltage: 11 V Maximum Operating Temperature: + 150 C Package / Case: SOT-539A Mounting Style: SMD/SMT Factory Pack Quantity: 60