Результаты поиска BFT25A,215

Найдено 2 результатов.

• BFT25A,215
  NXP Semiconductors — NXP Semiconductors BFT25A,215 Collector Current (dc) (max): 6.5mA Collector- Emitter Voltage Vceo Max: 5 V Collector-base Voltage: 8V Collector-emitter Voltage: 5V Configuration: Single Continuous Collector Current: 0.0065 A Current - Collector (ic) (max): 6.5mA Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500ВµA, 1V Dc Current Gain (min): 50 Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V Emitter- Base Voltage Vebo: 2 V Emitter-base Voltage: 2V Frequency (max): 5GHz Frequency - Transition: 5GHz Gain: - ID_COMPONENTS: 1949021 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 5000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz Number Of Elements: 1 Operating Temp Range: -65C to 175C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 32mW Power Dissipation: 32 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 5V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 5 V Emitter- Base Voltage VEBO: 2 V DC Collector/Base Gain hfe Min: 50 DC Current Gain hFE Max: 50 Gain Bandwidth Product fT: 5000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFT25A T/R Other Names: 568-1992-2, 934008580215, BFT25A T/R
• BFT25A,215
  NXP Semiconductors — NXP Semiconductors BFT25A,215 Collector Current (dc) (max): 6.5mA Collector- Emitter Voltage Vceo Max: 5 V Collector-base Voltage: 8V Collector-emitter Voltage: 5V Configuration: Single Continuous Collector Current: 0.0065 A Current - Collector (ic) (max): 6.5mA Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500ВµA, 1V Dc Current Gain (min): 50 Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V Emitter- Base Voltage Vebo: 2 V Emitter-base Voltage: 2V Frequency (max): 5GHz Frequency - Transition: 5GHz Gain: - ID_COMPONENTS: 1949021 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 5000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz Number Of Elements: 1 Operating Temp Range: -65C to 175C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 32mW Power Dissipation: 32 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 5V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 5 V Emitter- Base Voltage VEBO: 2 V DC Collector/Base Gain hfe Min: 50 DC Current Gain hFE Max: 50 Gain Bandwidth Product fT: 5000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFT25A T/R Other Names: 568-1992-2, 934008580215, BFT25A T/R