Результаты поиска BFQ18A
Найдено 4 результатов.
- Philips — NPN 4 GHz wideband transistor
- NXP — RF Transistors NPN 18V 150mA 4GHZ
- NXP Semiconductors — NXP Semiconductors BFQ18AT/R Mfr Package Description: PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: TIN Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 1 W Transistor Type: RF SMALL SIGNAL Highest Frequency Band: S BAND Collector Current-Max (IC): 0.1500 A Collector-emitter Voltage-Max: 18 V Transition Frequency-Nom (fT): 4000 MHz
- NXP Semiconductors — NXP Semiconductors BFQ18A,115 Collector- Emitter Voltage Vceo Max: 18 V Configuration: Single Continuous Collector Current: 0.15 A Current - Collector (ic) (max): 150mA Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 10V Dc Current Gain Hfe Max: 25 Emitter- Base Voltage Vebo: 2 V Frequency - Transition: 4GHz Gain: - ID_COMPONENTS: 3737825 Maximum Operating Frequency: 4000 MHz Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): - Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 1W Power Dissipation: 1000 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 18V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 18 V Emitter- Base Voltage VEBO: 2 V DC Current Gain hFE Max: 25 Gain Bandwidth Product fT: 4000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BFQ18A T/R Other Names: 933450430115::BFQ18A T/R::BFQ18A T/R