Результаты поиска BFG10/X,215

Найдено 2 результатов.

• BFG10/X,215
  Philips Semiconductors — Philips Semiconductors BFG10/X,215 RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 8 V Emitter- Base Voltage VEBO: 2.5 V Continuous Collector Current: 250 mA Power Dissipation: 400 mW DC Collector/Base Gain hfe Min: 25 Package / Case: SOT-143 Mounting Style: SMD/SMT Factory Pack Quantity: 3000
• BFG10/X,215
  NXP Semiconductors — Philips Semiconductors BFG10/X,215 RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 8 V Emitter- Base Voltage VEBO: 2.5 V Continuous Collector Current: 250 mA Power Dissipation: 400 mW DC Collector/Base Gain hfe Min: 25 Package / Case: SOT-143 Mounting Style: SMD/SMT Factory Pack Quantity: 3000