Результаты поиска BF998WR,115
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- NXP Semiconductors — NXP Semiconductors BF998WR,115 Configuration: Single Dual Gate Continuous Drain Current: 30 mA Current - Test: 10mA Current Rating: 30mA Drain-source Breakdown Voltage: 12 V Frequency: 200MHz Gain: - Gate-source Breakdown Voltage: 6 V ID_COMPONENTS: 1949200 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 0.6dB Package / Case: SOT-343R Power - Output: - Power Dissipation: 300 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 8V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 12 V Gate-Source Breakdown Voltage: 6 V Factory Pack Quantity: 3000 Part # Aliases: BF998WR T/R Other Names: 934031450115::BF998WR T/R::BF998WR T/R