Результаты поиска BF996S,215
Найдено 2 результатов.
- NXP Semiconductors — NXP Semiconductors BF996S,215 Configuration: Single Dual Gate Continuous Drain Current: 30 mA Current - Test: 10mA Current Rating: 30mA Drain-source Breakdown Voltage: 20 V Frequency: 200MHz Gain: 25dB Gate-source Breakdown Voltage: +/- 6 V ID_COMPONENTS: 1949180 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 1dB Package / Case: SOT-143, SOT-143B, TO-253AA Power - Output: - Power Dissipation: 200 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 15V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 6 V Factory Pack Quantity: 3000 Part # Aliases: BF996S T/R Other Names: 933754980215::BF996S T/R::BF996S T/R
- NXP Semiconductors — NXP Semiconductors BF996S,215 Configuration: Single Dual Gate Continuous Drain Current: 30 mA Current - Test: 10mA Current Rating: 30mA Drain-source Breakdown Voltage: 20 V Frequency: 200MHz Gain: 25dB Gate-source Breakdown Voltage: +/- 6 V ID_COMPONENTS: 1949180 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 1dB Package / Case: SOT-143, SOT-143B, TO-253AA Power - Output: - Power Dissipation: 200 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 15V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 6 V Factory Pack Quantity: 3000 Part # Aliases: BF996S T/R Other Names: 933754980215::BF996S T/R::BF996S T/R