Результаты поиска BF861C,215
Найдено 2 результатов.
- Philips Semiconductors — Philips Semiconductors BF861C,215 Product Category: Transistors RF JFET Configuration: Single Transistor Polarity: N-Channel Drain Source Voltage VDS: 25 V Gate-Source Cutoff Voltage: - 0.8 V to - 2 V Gate-Source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: 25 V Drain Current (Idss at Vgs=0): 25 mA Power Dissipation: 250 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Factory Pack Quantity: 3000 Part # Aliases: BF861C T/R
- NXP Semiconductors — Philips Semiconductors BF861C,215 Product Category: Transistors RF JFET Configuration: Single Transistor Polarity: N-Channel Drain Source Voltage VDS: 25 V Gate-Source Cutoff Voltage: - 0.8 V to - 2 V Gate-Source Breakdown Voltage: - 25 V Maximum Drain Gate Voltage: 25 V Drain Current (Idss at Vgs=0): 25 mA Power Dissipation: 250 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Factory Pack Quantity: 3000 Part # Aliases: BF861C T/R