Результаты поиска BF1101

Найдено 12 результатов.

• BF1101
  Philips — N-channel dual-gate MOS-FETs
• BF1101R
  Philips — N-channel dual-gate MOS-FETs
• BF1101WR
  Philips — N-channel dual-gate MOS-FETs
• BF1101WRT
  NXP Semiconductors — NXP Semiconductors BF1101WRT Application: VHF/UHF Channel Mode: Enhancement Channel Type: N Continuous Drain Current: 0.03A Drain Source Voltage (max): 7V Frequency (max): 1GHz Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF Lead Free Status / Rohs Status: Compliant Mounting: Surface Mount Noise Figure (max): 2.5dB Number Of Elements: 1 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 1.2@5VpF Package Type: CMPAK Pin Count: 3 +Tab Power Dissipation (max): 200mW Reverse Capacitance (typ): 0.025@5VpF Screening Level: Military
• BF1101WRNC
  Philips Semiconductors —
• BF1101,215
  NXP Semiconductors — NXP Semiconductors BF1101,215 Configuration: Dual Continuous Drain Current: 30 mA Current - Test: 12mA Current Rating: 30mA Drain-source Breakdown Voltage: 16 V Frequency: 800MHz Gain: - ID_COMPONENTS: 3737881 Mounting Style: SMD/SMT Noise Figure: 1.7dB Package / Case: SOT-143, SOT-143B, TO-253AA Power - Output: - Power Dissipation: 200 mW Series: - Transistor Polarity: Dual N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 5V RoHS: yes Drain-Source Breakdown Voltage: 16 V Factory Pack Quantity: 3000
• BF1101WR T/R
  NXP — FETs - RF N-CH DUAL GATE 7V
• BF1101R,215
  NXP Semiconductors — NXP Semiconductors BF1101R,215 Configuration: Dual Continuous Drain Current: 30 mA Current - Test: 12mA Current Rating: 30mA Drain-source Breakdown Voltage: 16 V Frequency: 800MHz Gain: - ID_COMPONENTS: 3737876 Mounting Style: SMD/SMT Noise Figure: 1.7dB Package / Case: TO-253-4 Reverse Pinning, SC-61 Power - Output: - Power Dissipation: 200 mW Series: - Transistor Polarity: Dual N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 5V
• BF1101WR,135
  NXP Semiconductors — Philips Semiconductors BF1101WR,135 RoHS: yes Configuration: Dual Transistor Polarity: Dual N-Channel Drain-Source Breakdown Voltage: 16 V Continuous Drain Current: 30 mA Power Dissipation: 200 mW Mounting Style: SMD/SMT Package / Case: SOT-143R Factory Pack Quantity: 10000
• BF1101WR,115
  NXP Semiconductors — NXP Semiconductors BF1101WR,115 Application: VHF/UHF Channel Mode: Enhancement Channel Type: N Configuration: Single Dual Gate Continuous Drain Current: 0.03 A Current - Test: 12mA Current Rating: 30mA Drain Source Voltage (max): 7V Drain-source Breakdown Voltage: 7 V Frequency: 800MHz Frequency (max): 1GHz Gain: - Gate-source Breakdown Voltage: 7 V ID_COMPONENTS: 1949213 Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: 1.7dB Noise Figure (max): 2.5dB Number Of Elements: 1 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 1.2@5VpF Package / Case: CMPAK-4 Package Type: CMPAK Pin Count: 3 +Tab Power - Output: - Power Dissipation: 200 mW Power Dissipation (max): 200mW Reverse Capacitance (typ): 0.025@5VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 5V Other Names: 934054130115::BF1101WR T/R::BF1101WR T/R