Результаты поиска BF1100WR

Найдено 4 результатов.

• BF1100WR
  Philips — Dual-gate MOS-FET
• BF1100WR-T
  NXP Semiconductors — NXP Semiconductors BF1100WR-T Mfr Package Description: MICRO MINIATURE, PLASTIC PACKAGE-4 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: COMPLEX Case Connection: SOURCE Number of Elements: 2 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.2800 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, ENHANCEMENT Transistor Type: RF SMALL SIGNAL Drain Current-Max (ID): 0.0300 A Highest Frequency Band: ULTRA HIGH FREQUENCY BAND Feedback Cap-Max (Crss): 0.0350 pF DS Breakdown Voltage-Min: 14 V
• BF1100WR T/R
  NXP — MOSFETs - Arrays TAPE-7 MOS-RFSS
• BF1100WR,115
  NXP Semiconductors — NXP Semiconductors BF1100WR,115 Configuration: Single Dual Gate Continuous Drain Current: 0.03 A Current - Test: 10mA Current Rating: 30mA Drain-source Breakdown Voltage: 14 V Frequency: 800MHz Gain: - ID_COMPONENTS: 3737894 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 2dB Package / Case: CMPAK-4 Power - Output: - Power Dissipation: 280 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 14V Voltage - Test: 9V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 14 V Factory Pack Quantity: 3000 Part # Aliases: BF1100WR T/R Other Names: 934036570115, BF1100WR T/R