Результаты поиска BD539

Найдено 10 результатов.

• BD539
  Power Innovations — NPN SILICON POWER TRANSISTORS
• BD539A
  Power Innovations — NPN SILICON POWER TRANSISTORS
• BD539B
  Power Innovations — NPN SILICON POWER TRANSISTORS
• BD539C
  Power Innovations — NPN SILICON POWER TRANSISTORS
• BD539D
  Power Innovations — NPN SILICON POWER TRANSISTORS
• BD539-S
  Bourns — Bourns BD539-S Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 5 A DC Collector/Base Gain hfe Min: 40 at 0.5 A at 4 V, 30 at 1 A at 4 V, 12 at 3 A at 4 V Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Continuous Collector Current: 5 A Maximum Power Dissipation: 45 W Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000
• BD539C-S
  Bourns — Bourns BD539C-S Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 5 A DC Collector/Base Gain hfe Min: 40 at 0.5 A at 4 V, 30 at 1 A at 4 V, 12 at 3 A at 4 V Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Continuous Collector Current: 5 A Maximum Power Dissipation: 45 W Minimum Operating Temperature: - 65 C Factory Pack Quantity: 15000
• BD539B-S
  Bourns — Bourns BD539B-S Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 5 A DC Collector/Base Gain hfe Min: 40 at 0.5 A at 4 V, 30 at 1 A at 4 V, 12 at 3 A at 4 V Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Continuous Collector Current: 5 A Maximum Power Dissipation: 45 W Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000
• BD539A-S
  Bourns — Bourns BD539A-S Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 5 A DC Collector/Base Gain hfe Min: 40 at 0.5 A at 4 V, 30 at 1 A at 4 V, 12 at 3 A at 4 V Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Continuous Collector Current: 5 A Maximum Power Dissipation: 45 W Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000
• MALIEYH07BD539D02K
  Vishay Intertechnology —