Результаты поиска BCX55-10,115
Найдено 3 результатов.
- Philips Semiconductors — Philips Semiconductors BCX55-10,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89 DC Current Gain hFE Max: 63 at 150 mA at 2 V Maximum Power Dissipation: 1250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BCX55-10 T/R
- NXP Semiconductors — Philips Semiconductors BCX55-10,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89 DC Current Gain hFE Max: 63 at 150 mA at 2 V Maximum Power Dissipation: 1250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BCX55-10 T/R
- NXP Semiconductors — Philips Semiconductors BCX55-10,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89 DC Current Gain hFE Max: 63 at 150 mA at 2 V Maximum Power Dissipation: 1250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BCX55-10 T/R