Результаты поиска BCX5210TA

Найдено 4 результатов.

• BCX5210TA
  Diodes — Diodes BCX5210TA Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89 DC Current Gain hFE Max: 63 at 150 mA at 2 V Maximum Power Dissipation: 1000 mW Minimum Operating Temperature: - 65 C
• BCX5210TA
  Diodes — Diodes BCX5210TA Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89 DC Current Gain hFE Max: 63 at 150 mA at 2 V Maximum Power Dissipation: 1000 mW Minimum Operating Temperature: - 65 C
• BCX52-10TA
  Diodes — Diodes BCX52-10TA Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: MATTE TIN Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 1 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 63 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 60 V Transition Frequency-Nom (fT): 150 MHz
• BCX52-10-TAPE-13
  NXP Semiconductors — NXP Semiconductors BCX52-10-TAPE-13 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 1 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 25 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 60 V Transition Frequency-Nom (fT): 50 MHz