Результаты поиска BCP5110TA

Найдено 3 результатов.

• BCP5110TA
  Diodes — Diodes BCP5110TA Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 45 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP5110TA
  Diodes — Diodes BCP5110TA Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 45 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP51-10-TAPE-7
  NXP Semiconductors — NXP Semiconductors BCP51-10-TAPE-7 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 1.5 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 25 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 50 MHz