Результаты поиска BC856BLT3

Найдено 6 результатов.

• BC856BLT3
  ON Semiconductor — Transistors Bipolar- General Purpose 100mA 80V PNP
• BC856BLT3
  ON Semiconductor — TRANS PNP GP 65V 100MA SOT-23
• BC856BLT3G
  ON Semiconductor — Transistors Bipolar- General Purpose 100mA 80V PNP
• BC856BLT3G
  ON Semiconductor — TRANS PNP GP 65V 100MA SOT-23
• SBC856BLT3G
  ON Semiconductor — ON Semiconductor SBC856BLT3G Collector- Emitter Voltage Vceo Max: 65 V Configuration: Single Continuous Collector Current: 0.1 A Dc Collector/base Gain Hfe Min: 220 Emitter- Base Voltage Vebo: 5 V Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23-3 Power Dissipation: 300 mW Rohs: yes Transistor Polarity: PNP RoHS: yes DC Collector/Base Gain hfe Min: 220 Collector- Emitter Voltage VCEO Max: 65 V Emitter- Base Voltage VEBO: 5 V
• LBC856BLT3G
  LRC [Leshan Radio Company] — General Purpose Transistors PNP Silicon