Результаты поиска BC850C,215

Найдено 3 результатов.

• BC850C,215
  Philips Semiconductors — Philips Semiconductors BC850C,215 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 420 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 420 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC850C T/R
• BC850C,215
  NXP Semiconductors — Philips Semiconductors BC850C,215 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 420 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 420 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC850C T/R
• BC850C,215
  NXP Semiconductors — Philips Semiconductors BC850C,215 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 420 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 420 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC850C T/R