Результаты поиска BC849B,235

Найдено 2 результатов.

• BC849B,235
  Philips Semiconductors — Philips Semiconductors BC849B,235 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 200 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 BC849B
• BC849B,235
  NXP Semiconductors — Philips Semiconductors BC849B,235 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 200 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 BC849B