Результаты поиска BC847BW,135
Найдено 2 результатов.
- Philips Semiconductors — Philips Semiconductors BC847BW,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-323 DC Current Gain hFE Max: 200 at 2 mA at 5 V Maximum Power Dissipation: 200 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 BC847BW
- NXP Semiconductors — Philips Semiconductors BC847BW,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-323 DC Current Gain hFE Max: 200 at 2 mA at 5 V Maximum Power Dissipation: 200 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 BC847BW