Результаты поиска BC847BPN,125

Найдено 2 результатов.

• BC847BPN,125
  Philips Semiconductors — Philips Semiconductors BC847BPN,125 RoHS: yes Configuration: Dual Transistor Polarity: NPN/PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-363 Continuous Collector Current: 100 mA DC Current Gain hFE Max: 450 Maximum Power Dissipation: 400 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000
• BC847BPN,125
  NXP Semiconductors — Philips Semiconductors BC847BPN,125 RoHS: yes Configuration: Dual Transistor Polarity: NPN/PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-363 Continuous Collector Current: 100 mA DC Current Gain hFE Max: 450 Maximum Power Dissipation: 400 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000