Результаты поиска BC846BWT1G

Найдено 7 результатов.

• BC846BWT1G
  ON Semiconductor — Transistors Bipolar- General Purpose 100mA 80V NPN
• BC846BWT1G
  ON Semiconductor — TRANSISTOR NPN 65V 100MA SC-70
• BC846BWT1G
  ON Semiconductor — TRANSISTOR NPN 65V 100MA SC-70
• BC846BWT1G
  ON Semiconductor — TRANSISTOR NPN 65V 100MA SC-70
• SBC846BWT1G
  ON Semiconductor — ON Semiconductor SBC846BWT1G Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 65 V Collector-emitter Saturation Voltage: 0.6 V Configuration: Single Continuous Collector Current: 100 mA Dc Current Gain Hfe Max: 450 Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 100 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 150 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SC-70 Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 65 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.6 V Gain Bandwidth Product fT: 100 MHz DC Current Gain hFE Max: 450
• LBC846BWT1G
  LRC (Leshan Radio Company) — LRC (Leshan Radio Company) LBC846BWT1G Date_code: 07+ Packing_info: SOT-323 Quantity: 3000
• LBC846BWT1G
  LRC (Leshan Radio Company) — LRC (Leshan Radio Company) LBC846BWT1G Date_code: 07+ Packing_info: SOT-323 Quantity: 3000