Результаты поиска BAV756S

Найдено 3 результатов.

• BAV756S
  Philips — High-speed switching diode array
• BAV756S,115
  NXP Semiconductors — NXP Semiconductors BAV756S,115 Configuration: Quad Current - Average Rectified (io) (per Diode): 100mA (DC) Current - Reverse Leakage @ Vr: 500nA @ 80V Diode Configuration: 2 Pair Series Connection Forward Continuous Current: 150 mA Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942105 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 4 A Maximum Diode Capacitance: 2 pF Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 250 mW Maximum Reverse Leakage Current: 0.5 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SC-70-6, SC-88, SOT-363 Peak Reverse Voltage: 90 V Product: Switching Diodes Recovery Time: 4 ns Reverse Recovery Time (trr): 4ns Series: - Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Dc Reverse (vr) (max): 90V Voltage - Forward (vf) (max) @ If: 1V @ 50mA Other Names: 934052910115::BAV756S T/R::BAV756S T/R
• BAV756S_BAW56_SER
  NXP Semiconductors —