Результаты поиска BAV23S,215
Найдено 3 результатов.
- NXP [NXP Semiconductors] — Dual high-voltage switching diodes
- Philips Semiconductors — Philips Semiconductors BAV23S,215 Capacitance, Junction: 2 pF Configuration: Dual Series Current, Forward: 125 mA Current, Reverse: 100 ОјA Current, Surge: 1.7 A Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Package Type: SOT-23 Power Dissipation: 250 mW Primary Type: Rectifier Speed, Switching: High Temperature, Junction, Maximum: +150 В°C Temperature, Operating: -65 to +150 В°C Time, Recovery: 50 ns Voltage, Forward: 1.25 V Voltage, Reverse: 200 V
- NXP Semiconductors — Philips Semiconductors BAV23S,215 Capacitance, Junction: 2 pF Configuration: Dual Series Current, Forward: 125 mA Current, Reverse: 100 ОјA Current, Surge: 1.7 A Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Package Type: SOT-23 Power Dissipation: 250 mW Primary Type: Rectifier Speed, Switching: High Temperature, Junction, Maximum: +150 В°C Temperature, Operating: -65 to +150 В°C Time, Recovery: 50 ns Voltage, Forward: 1.25 V Voltage, Reverse: 200 V