Результаты поиска BAV20,113
Найдено 2 результатов.
- NXP Semiconductors — NXP Semiconductors BAV20,113 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 250mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 150V Diode Type: Standard Forward Continuous Current: 0.25 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 3594700 Max Surge Current: 9 A Maximum Operating Temperature: + 175 C Maximum Reverse Leakage Current: 0.1 uA Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Mounting Type: Through Hole Operating Temperature Range: + 175 C Package / Case: DO-204AH, DO-35, Axial Peak Reverse Voltage: 200 V Product: General Purpose Diodes Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 150V Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Factory Pack Quantity: 10000 Part # Aliases: BAV20 T/R Other Names: 933189200113, BAV20 T/R
- Murata Electronics North America — CAP 4-ARRAY 820PF 50V X7R 1206