Результаты поиска BAS29,215

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• BAS29,215
  NXP Semiconductors — NXP Semiconductors BAS29,215 Capacitance @ Vr, F: 35pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 250mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 90V Forward Continuous Current: 0.25 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942142 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 10 A Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 0.1 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Peak Reverse Voltage: 110 V Product: General Purpose Diodes Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 90V Voltage - Forward (vf) (max) @ If: 1V @ 200mA Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Factory Pack Quantity: 3000 Part # Aliases: BAS29 T/R Other Names: 933723180215::BAS29 T/R::BAS29 T/R