Результаты поиска BAS19,215
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- NXP Semiconductors — NXP Semiconductors BAS19,215 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 200mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 100V Diode Type: Standard Forward Continuous Current: 0.2 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942097 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 1.7 A Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 0.1 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Peak Reverse Voltage: 120 V Product: Switching Diodes Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Dc Reverse (vr) (max): 100V Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Factory Pack Quantity: 3000 Part # Aliases: BAS19 T/R Other Names: 568-4860-2, 933502020215, BAS19 T/R, BAS19,215