Результаты поиска BAS16,215

Найдено 2 результатов.

• BAS16.215
  NXP Semiconductors — NXP Semiconductors BAS16.215 Diode Type: Small Signal Forward Current If(av): 215mA Forward Surge Current Ifsm Max: 4A Forward Voltage Vf Max: 1.25V Operating: RoHS Compliant Repetitive Reverse Voltage Vrrm Max: 85V Reverse Recovery Time Trr Max: 4ns
• BAS16,215
  NXP Semiconductors — NXP Semiconductors BAS16,215 Avg. Forward Curr (max): 0.215A Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 215mA (DC) Current - Reverse Leakage @ Vr: 500nA @ 80V Diode Type: Standard Forward Continuous Current: 0.215 A Forward Voltage: 1.25V Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942129 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 4 A Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 0.5 uA Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Operating Temperature Range: + 150 C Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Peak Non-repetitive Surge Current (max): 4A Peak Rep Rev Volt: 100V Peak Reverse Voltage: 100 V Pin Count: 3 Product: Switching Diodes Recovery Time: 4 ns Rectifier Type: Switching Diode Rev Curr: 0.5uA Rev Recov Time: 4ns Reverse Recovery Time (trr): 4ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 100V Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA Other Names: 568-1596-2, 933460620215, BAS16 T/R