Результаты поиска ATF-55143-TR1

Найдено 4 результатов.

• ATF-55143-TR1
  Avago Technologies US Inc — IC TRANS E-PHEMT 2GHZ SOT-343
• ATF-55143-TR1
  Avago Technologies US Inc — IC TRANS E-PHEMT 2GHZ SOT-343
• ATF-55143-TR1G
  Avago Technologies — Avago Technologies ATF-55143-TR1G Configuration: Single Dual Source Continuous Drain Current: 100 mA Continuous Drain Current Id: 100mA Current - Test: 10mA Current Rating: 100mA Dc Current Gain Min (hfe): 17.7 Drain Source Voltage Vds: 5 V Frequency: 2GHz Gain: 17.7dB Gate-source Breakdown Voltage: - 5 V to 1 V ID_COMPONENTS: 1950349 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: - 5 V to 1 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT No. Of Pins: 4 Noise Figure: 0.6dB Noise Figure Typ: 0.6dB Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343 Power - Output: 14.4dBm Power Dissipation: 270 mW Power Dissipation Pd: 270mW Rohs Compliant: Yes Series: - Transistor Polarity: N-Channel Transistor Type: pHEMT FET Voltage - Rated: 5V Voltage - Test: 2.7V Product Category: Transistors RF GaAs RoHS: yes Technology Type: EpHEMT Forward Transconductance gFS (Max / Min): 220 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V P1dB: 14.4 dBm Factory Pack Quantity: 3000 Other Names: 516-1573-2
• ATF-55143-TR1G
  Avago Technologies — Avago Technologies ATF-55143-TR1G Configuration: Single Dual Source Continuous Drain Current: 100 mA Continuous Drain Current Id: 100mA Current - Test: 10mA Current Rating: 100mA Dc Current Gain Min (hfe): 17.7 Drain Source Voltage Vds: 5 V Frequency: 2GHz Gain: 17.7dB Gate-source Breakdown Voltage: - 5 V to 1 V ID_COMPONENTS: 1950349 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: - 5 V to 1 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT No. Of Pins: 4 Noise Figure: 0.6dB Noise Figure Typ: 0.6dB Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343 Power - Output: 14.4dBm Power Dissipation: 270 mW Power Dissipation Pd: 270mW Rohs Compliant: Yes Series: - Transistor Polarity: N-Channel Transistor Type: pHEMT FET Voltage - Rated: 5V Voltage - Test: 2.7V Product Category: Transistors RF GaAs RoHS: yes Technology Type: EpHEMT Forward Transconductance gFS (Max / Min): 220 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V P1dB: 14.4 dBm Factory Pack Quantity: 3000 Other Names: 516-1573-2