Результаты поиска ADR5040BRTZ-R2
Найдено 9 результатов.
- ADI (Analog Devices, Inc.) — ADI (Analog Devices, Inc.) ADR5040BRTZ-R2 Current - Cathode: 50ВµA Current - Output: 15mA Current - Quiescent: - ID_COMPONENTS: 716310 Mounting Type: Surface Mount Number Of Channels: 1 Operating Temperature: -40В°C ~ 125В°C Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Reference Type: Shunt Series: ADR504 Temperature Coefficient: 75ppm/В°C Tolerance: В±0.1% Voltage - Input: - Voltage - Output: 2.048V RoHS: yes Product: Voltage References Topology: Shunt References Output Voltage: 2.048 V Initial Accuracy: +/- 2 mV Average Temperature Coefficient (Typ): 10 PPM / C Shunt Current (Max): 15 mA Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 40 C Shunt Current (Min): 50 uA
- STMICROELECTRONICS [STMicroelectronics] — 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
- STMICROELECTRONICS [STMicroelectronics] — 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
- STMICROELECTRONICS [STMicroelectronics] — 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
- STMICROELECTRONICS [STMicroelectronics] — 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
- STMICROELECTRONICS [STMicroelectronics] — 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
- STMICROELECTRONICS [STMicroelectronics] — 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
- STMICROELECTRONICS [STMicroelectronics] — 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
- STMICROELECTRONICS [STMicroelectronics] — 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
