Результаты поиска AD648JR
Найдено 7 результатов.
- Analog Devices Inc —
- Analog Devices, Inc — OPAMP, DUAL PRECISION BIFET, 8 PIN SOIC
- Analog Devices Inc —
- Analog Devices Inc —
- ADI (Analog Devices, Inc.) — ADI (Analog Devices, Inc.) AD648JRZREEL7 Date_code: 06+ Quantity: 3000
- ADI (Analog Devices, Inc.) — ADI (Analog Devices, Inc.) AD648JRZ-REEL -3db Bandwidth: - Amplifier Type: J-FET Current - Input Bias: 5pA Current - Output / Channel: 15mA Current - Supply: 340?µA Gain Bandwidth Product: 1MHz ID_COMPONENTS: 1327654 Mounting Type: Surface Mount Number Of Circuits: 2 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Series: - Slew Rate: 1.8 V/?µs Voltage - Input Offset: 750?µV Voltage - Supply, Single/dual (?±): ?±4.5 V ~ 18 V RoHS: yes Number of Channels: 2 Common Mode Rejection Ratio (Min): 76 dB Input Offset Voltage: 750 uV Input Bias Current (Max): 0.00002 uA at +/- 15 V Mounting Style: SMD/SMT Shutdown: No Output Current: 2.4 mA Maximum Operating Temperature: + 70 C Maximum Dual Supply Voltage: +/- 18 V Minimum Dual Supply Voltage: +/- 4.5 V Minimum Operating Temperature: 0 C Technology: FET Voltage Gain dB: 120 dB
- ADI (Analog Devices, Inc.) — ADI (Analog Devices, Inc.) AD648JRZ-REEL7 -3db Bandwidth: - Amplifier Type: J-FET Current - Input Bias: 5pA Current - Output / Channel: 15mA Current - Supply: 340?µA Gain Bandwidth Product: 1MHz ID_COMPONENTS: 1327682 Mounting Type: Surface Mount Number Of Circuits: 2 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Series: - Slew Rate: 1.8 V/?µs Voltage - Input Offset: 750?µV Voltage - Supply, Single/dual (?±): ?±4.5 V ~ 18 V RoHS: yes Number of Channels: 2 Common Mode Rejection Ratio (Min): 76 dB Input Offset Voltage: 750 uV Input Bias Current (Max): 0.00002 uA at +/- 15 V Mounting Style: SMD/SMT Shutdown: No Output Current: 2.4 mA Maximum Operating Temperature: + 70 C Maximum Dual Supply Voltage: +/- 18 V Minimum Dual Supply Voltage: +/- 4.5 V Minimum Operating Temperature: 0 C Technology: FET Voltage Gain dB: 120 dB
