Результаты поиска ACT108-600E,126

Найдено 2 результатов.

• ACT108-600E,126
  Philips Semiconductors — Philips Semiconductors ACT108-600E,126 RoHS: yes On-State RMS Current (It RMS): 0.8 A Non Repetitive On-State Current: 8.8 A Rated Repetitive Off-State Voltage VDRM: 600 V Off-State Leakage Current @ VDRM IDRM: 0.2 mA On-State Voltage: 1.3 V Holding Current (Ih Max): 25 mA Gate Trigger Voltage (Vgt): 1 V Gate Trigger Current (Igt): 10 mA Maximum Operating Temperature: + 125 C Mounting Style: Through Hole Package / Case: TO-92-3 Minimum Operating Temperature: - 40 C Factory Pack Quantity: 2000
• ACT108-600E,126
  NXP Semiconductors — Philips Semiconductors ACT108-600E,126 RoHS: yes On-State RMS Current (It RMS): 0.8 A Non Repetitive On-State Current: 8.8 A Rated Repetitive Off-State Voltage VDRM: 600 V Off-State Leakage Current @ VDRM IDRM: 0.2 mA On-State Voltage: 1.3 V Holding Current (Ih Max): 25 mA Gate Trigger Voltage (Vgt): 1 V Gate Trigger Current (Igt): 10 mA Maximum Operating Temperature: + 125 C Mounting Style: Through Hole Package / Case: TO-92-3 Minimum Operating Temperature: - 40 C Factory Pack Quantity: 2000