Результаты поиска 8242-T

Найдено 38 результатов.

• 8242-T
  MG Chemicals — Wipe; Pre-Saturated; Lint Free; Individually Wrapped; 4x3"; 50 Wipes
• P1168.242T
  Pulse — Drum Core Shielded Inductors 2.4uH 30%
• MCP98242T
  MICROCHIP [Microchip Technology] — Memory Module Temperature Sensor w/EEPROM for SPD
• MCP98242T-BE/ST
  Microchip — Temp Sensors - Analog JEDEC DIMM Serial output temp sensor
• MCP98242T-BE/MC
  Microchip — Temp Sensors - Analog JEDEC DIMM Serial output temp sensor
• MCP98242T-CE/MC
  Microchip — Temp Sensors - Serial Output - SMBus JEDEC DIMM SER Outpt Temp Snsr SPD EEPROM
• MCP98242T-CE/ST
  Microchip — Temp Sensors - Serial Output - SMBus JEDEC DIMM SER Outpt Temp Snsr SPD EEPROM
• MCP98242T-BE/MNY
  Microchip — Temp Sensors - Serial Output - SMBus JEDEC DIMM SER Outpt Temp Snsr SPD EEPROM
• MCP98242T-CE/MNY
  Microchip — Temp Sensors - Serial Output - SMBus JEDEC DIMM SER Outpt Temp Snsr SPD EEPROM
• IRFHS8242TRPBF
  IR (International Rectifier) — IR (International Rectifier) IRFHS8242TRPBF Continuous Drain Current: 21 A Current - Continuous Drain (id) @ 25В° C: 9.9A Drain To Source Voltage (vdss): 25V Drain-source Breakdown Voltage: 25 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 10.4nC @ 10V Gate Charge Qg: 4.3 nC Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 653pF @ 10V Mounting Type: Surface Mount Package / Case: * Power - Max: 2.1W Power Dissipation: 2.1 W Rds On (max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V Resistance Drain-source Rds (on): 21 mOhms Series: HEXFETВ® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.35V @ 25ВµA RoHS: yes Drain-Source Breakdown Voltage: 25 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 21 mOhms Factory Pack Quantity: 4000