Результаты поиска 3N259-M

Найдено 3 результатов.

• 3N259-M
  Central Semiconductor — Leaded Bridge Rectifier General Purpose
• 3N259-M4/51
  Vishay Semiconductor Diodes Division — RECT BRIDGE 1PHASE 1KV 2A KBPM
• 3N259-MLEADFREE
  Central Semiconductor — Central Semiconductor 3N259-MLEADFREE Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: WIRE Terminal Finish: MATTE TIN (315) Terminal Position: SINGLE Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: BRIDGE, 4 ELEMENTS Number of Elements: 4 Diode Element Material: SILICON Diode Type: BRIDGE RECTIFIER DIODE Number of Phases: 1 Breakdown Voltage-Min: 1000 V Average Output Current-Max: 2 A Rep Pk Reverse Voltage-Max: 1000 V Non-rep Pk Forward Current-Max: 55 A