Результаты поиска 2SK2953(F)

Найдено 3 результатов.

• 2SK2953
  TOSHIBA — Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
• 2SK2953(F)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK2953(F) Configuration: Single Continuous Drain Current: 15 A Current - Continuous Drain (id) @ 25В° C: 15A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 80nC @ 10V Gate-source Breakdown Voltage: +/- 30 V Input Capacitance (ciss) @ Vds: 3520pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-16F1B Power - Max: 90W Power Dissipation: 90000 mW Rds On (max) @ Id, Vgs: 400 mOhm @ 8A, 10V Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 0.4 Ohms Fall Time: 60 ns Rise Time: 50 ns Factory Pack Quantity: 50 Other Names: 2SK2953(F), 2SK2953F
• 2SK2953(F)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK2953(F) Configuration: Single Continuous Drain Current: 15 A Current - Continuous Drain (id) @ 25В° C: 15A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 80nC @ 10V Gate-source Breakdown Voltage: +/- 30 V Input Capacitance (ciss) @ Vds: 3520pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-16F1B Power - Max: 90W Power Dissipation: 90000 mW Rds On (max) @ Id, Vgs: 400 mOhm @ 8A, 10V Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 0.4 Ohms Fall Time: 60 ns Rise Time: 50 ns Factory Pack Quantity: 50 Other Names: 2SK2953(F), 2SK2953F