Результаты поиска 2SK2376(TE24L,Q)

Найдено 1 результатов.

• 2SK2376(TE24L,Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK2376(TE24L,Q) Current - Continuous Drain (id) @ 25В° C: 45A Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 110nC @ 10V Input Capacitance (ciss) @ Vds: 3350pF @ 10V Mounting Type: Through Hole Package / Case: TO-220FL Power - Max: 100W Rds On (max) @ Id, Vgs: 17 mOhm @ 25A, 10V Series: - Vgs(th) (max) @ Id: 2V @ 1mA