Результаты поиска 2SK1930(TE24L,Q)

Найдено 1 результатов.

• 2SK1930(TE24L,Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK1930(TE24L,Q) Current - Continuous Drain (id) @ 25В° C: 4A Drain To Source Voltage (vdss): 1000V (1kV) Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 60nC @ 10V Input Capacitance (ciss) @ Vds: 700pF @ 25V Mounting Type: Surface Mount Package / Case: 2-10S2B Power - Max: 100W Rds On (max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V Series: - Vgs(th) (max) @ Id: 3.5V @ 1mA