Результаты поиска 2SK1530-Y(F)

Найдено 2 результатов.

• 2SK1530-Y(F)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK1530-Y(F) Configuration: Single Continuous Drain Current: 12 A Current - Continuous Drain (id) @ 25В° C: 12A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 900pF @ 30V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-3P(L) (2-21F1B) Power - Max: 150W Power Dissipation: 150 W Rds On (max) @ Id, Vgs: - Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: - Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Fall Time: 60 ns Rise Time: 25 ns Other Names: 2SK1530YF
• 2SK1530-Y(F)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK1530-Y(F) Configuration: Single Continuous Drain Current: 12 A Current - Continuous Drain (id) @ 25В° C: 12A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 900pF @ 30V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-3P(L) (2-21F1B) Power - Max: 150W Power Dissipation: 150 W Rds On (max) @ Id, Vgs: - Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: - Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Fall Time: 60 ns Rise Time: 25 ns Other Names: 2SK1530YF