Результаты поиска 2SJ378(TP,Q)

Найдено 1 результатов.

• 2SJ378(TP,Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SJ378(TP,Q) Current - Continuous Drain (id) @ 25В° C: 5A Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 22nC @ 10V Input Capacitance (ciss) @ Vds: 630pF @ 10V Mounting Type: Through Hole Package / Case: 2-8M1B Power - Max: 1.3W Rds On (max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V Series: - Vgs(th) (max) @ Id: 2V @ 1mA