Результаты поиска 2SC6017-E

Найдено 3 результатов.

• 2SC6017-E
  ON Semiconductor — ON Semiconductor 2SC6017-E Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 50 V Collector-emitter Saturation Voltage: 180 mV Configuration: Single Continuous Collector Current: 10 A Dc Collector/base Gain Hfe Min: 200 Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 200 MHz Maximum Dc Collector Current: 13 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 20 W Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-251 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 180 mV Maximum DC Collector Current: 13 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 200 Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• 2SC6017-E
  ON Semiconductor — ON Semiconductor 2SC6017-E Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 50 V Collector-emitter Saturation Voltage: 180 mV Configuration: Single Continuous Collector Current: 10 A Dc Collector/base Gain Hfe Min: 200 Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 200 MHz Maximum Dc Collector Current: 13 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 20 W Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-251 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 180 mV Maximum DC Collector Current: 13 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 200 Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• 2SC6017-E
  ON Semiconductor — ON Semiconductor 2SC6017-E Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 50 V Collector-emitter Saturation Voltage: 180 mV Configuration: Single Continuous Collector Current: 10 A Dc Collector/base Gain Hfe Min: 200 Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 200 MHz Maximum Dc Collector Current: 13 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 20 W Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-251 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 180 mV Maximum DC Collector Current: 13 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 200 Transistor Type: GENERAL PURPOSE SMALL SIGNAL