Результаты поиска 2SC3413

Найдено 5 результатов.

• 2SC3413
  Hitachi Semiconductor — Silicon NPN Transistor
• 2SC3413
  Hitachi Semiconductor — Silicon NPN Epitaxial
• 2SC3413D
  Renesas Electronics — Renesas Electronics 2SC3413D Mfr Package Description: SPAK-3 Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: THROUGH-HOLE Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• 2SC3413-B
  Renesas Electronics — Renesas Electronics 2SC3413-B Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: WIRE Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Transistor Type: GENERAL PURPOSE SMALL SIGNAL
• 2SC3413DRF
  Renesas Electronics — Renesas Electronics 2SC3413DRF Mfr Package Description: SPAK-3 Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: THROUGH-HOLE Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.3000 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 250 Collector Current-Max (IC): 0.1000 A Collector-emitter Voltage-Max: 30 V Transition Frequency-Nom (fT): 200 MHz