Результаты поиска 2SB1123

Найдено 10 результатов.

• 2SB1123
  SANYO — PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications
• 2SB1123-D
  SANYO [Sanyo Semicon Device] — High-Current Switching Applications
• 2SB1123-S
  ON Semiconductor — ON Semiconductor 2SB1123-S Mfr Package Description: PCP, 3 PIN Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 0.5000 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 140 Collector Current-Max (IC): 2 A Collector-emitter Voltage-Max: 50 V Transition Frequency-Nom (fT): 150 MHz
• 2SB1123_10
  Sanyo Semiconductor —
• 2SB1123_10
  Sanyo Semiconductor —
• 2SB1123-TC
  Sanyo Semiconductor —
• 2SB1123T-TD-E
  ON Semiconductor — ON Semiconductor 2SB1123T-TD-E Collector- Base Voltage Vcbo: - 60 V Collector- Emitter Voltage Vceo Max: - 50 V Collector-emitter Saturation Voltage: - 0.3 V Configuration: Single Continuous Collector Current: - 2 A Dc Collector/base Gain Hfe Min: 100 mA Dc Current Gain Hfe Max: 560 Emitter- Base Voltage Vebo: - 6 V Gain Bandwidth Product Ft: 150 MHz Maximum Dc Collector Current: - 4 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 0.5 W Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: - 60 V Collector- Emitter Voltage VCEO Max: - 50 V Emitter- Base Voltage VEBO: - 6 V Collector-Emitter Saturation Voltage: - 0.3 V Maximum DC Collector Current: - 4 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 100 mA DC Current Gain hFE Max: 560
• 2SB1123T-TD-E
  ON Semiconductor — ON Semiconductor 2SB1123T-TD-E Collector- Base Voltage Vcbo: - 60 V Collector- Emitter Voltage Vceo Max: - 50 V Collector-emitter Saturation Voltage: - 0.3 V Configuration: Single Continuous Collector Current: - 2 A Dc Collector/base Gain Hfe Min: 100 mA Dc Current Gain Hfe Max: 560 Emitter- Base Voltage Vebo: - 6 V Gain Bandwidth Product Ft: 150 MHz Maximum Dc Collector Current: - 4 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 0.5 W Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: - 60 V Collector- Emitter Voltage VCEO Max: - 50 V Emitter- Base Voltage VEBO: - 6 V Collector-Emitter Saturation Voltage: - 0.3 V Maximum DC Collector Current: - 4 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 100 mA DC Current Gain hFE Max: 560
• 2SB1123S-TD-E
  ON Semiconductor — ON Semiconductor 2SB1123S-TD-E Collector- Base Voltage Vcbo: - 60 V Collector- Emitter Voltage Vceo Max: - 50 V Collector-emitter Saturation Voltage: - 0.3 V Configuration: Single Continuous Collector Current: - 2 A Dc Current Gain Hfe Max: 560 Emitter- Base Voltage Vebo: - 6 V Gain Bandwidth Product Ft: 150 MHz Maximum Dc Collector Current: - 4 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1.3 W Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Rohs: yes Transistor Polarity: PNP RoHS: yes Collector- Base Voltage VCBO: - 60 V Collector- Emitter Voltage VCEO Max: - 50 V Emitter- Base Voltage VEBO: - 6 V Collector-Emitter Saturation Voltage: - 0.3 V Maximum DC Collector Current: - 4 A Gain Bandwidth Product fT: 150 MHz DC Current Gain hFE Max: 560
• 2SB1123S-TD-E
  ON Semiconductor — ON Semiconductor 2SB1123S-TD-E Collector- Base Voltage Vcbo: - 60 V Collector- Emitter Voltage Vceo Max: - 50 V Collector-emitter Saturation Voltage: - 0.3 V Configuration: Single Continuous Collector Current: - 2 A Dc Current Gain Hfe Max: 560 Emitter- Base Voltage Vebo: - 6 V Gain Bandwidth Product Ft: 150 MHz Maximum Dc Collector Current: - 4 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1.3 W Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Rohs: yes Transistor Polarity: PNP RoHS: yes Collector- Base Voltage VCBO: - 60 V Collector- Emitter Voltage VCEO Max: - 50 V Emitter- Base Voltage VEBO: - 6 V Collector-Emitter Saturation Voltage: - 0.3 V Maximum DC Collector Current: - 4 A Gain Bandwidth Product fT: 150 MHz DC Current Gain hFE Max: 560