Результаты поиска 2SA1145-O(TE6,F,M)

Найдено 2 результатов.

• 2SA1145-O(TE6,F,M)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SA1145-O(TE6,F,M) Collector- Emitter Voltage Vceo Max: - 150 V Configuration: Single Continuous Collector Current: - 50 mA Current - Collector (ic) (max): 50mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 80 Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 200MHz Gain Bandwidth Product Ft: 200 MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-92-3 (Long Body), TO-226 Power - Max: 800mW Power Dissipation: 800 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 1V @ 1mA, 10mA Voltage - Collector Emitter Breakdown (max): 150V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: - 150 V Collector- Emitter Voltage VCEO Max: - 150 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 1 V Maximum DC Collector Current: 0.05 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 80 Maximum Operating Temperature: + 150 C DC Current Gain hFE Max: 240 Maximum Power Dissipation: 800 mW Factory Pack Quantity: 3000
• 2SA1145-O(TE6,F,M)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SA1145-O(TE6,F,M) Collector- Emitter Voltage Vceo Max: - 150 V Configuration: Single Continuous Collector Current: - 50 mA Current - Collector (ic) (max): 50mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 80 Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 200MHz Gain Bandwidth Product Ft: 200 MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-92-3 (Long Body), TO-226 Power - Max: 800mW Power Dissipation: 800 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 1V @ 1mA, 10mA Voltage - Collector Emitter Breakdown (max): 150V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: - 150 V Collector- Emitter Voltage VCEO Max: - 150 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 1 V Maximum DC Collector Current: 0.05 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 80 Maximum Operating Temperature: + 150 C DC Current Gain hFE Max: 240 Maximum Power Dissipation: 800 mW Factory Pack Quantity: 3000