Результаты поиска 2N6796

Найдено 21 результатов.

• 2N6796
  Fairchild Semiconductor — 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
• 2N6796
  International Rectifier — 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
• 2N6796
  SemeLAB — TMOS FET TRANSISTOR N - CHANNEL
• 2N6796
  Intersil — 8A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET
• 2N6796U
  SEMELAB —
• 2N6796_03
  SEMELAB —
• JAN2N6796
  Microsemi Corporation —
• 2N6796_10
  Microsemi Corporation —
• 2N6796_10
  Microsemi Corporation —
• 2N6796TXV
  Intersil — Intersil 2N6796TXV Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: WIRE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: METAL Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 8 A DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 0.1800 ohm Pulsed Drain Current-Max (IDM): 32 A